HL7852G HITACHI

Document overview

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Technical content

Features

  • Visible light output: λp = 785 nm Typ
  • Small beam ellipticity: 9.5:23
  • High output power: 50 mW (CW)
  • Built-in monitor photodiode

Absolute Maximum Ratings (TC = 25°C) Item Symbol Rated Value Unit Optical output power PO 50 mW Pulsed optical output power PO (pulse) 60*1 mW LD reverse voltage VR (LD) 2 V PD reverse voltage VR (PD) 30 V Operating temperature Topr –10 to +60 °C Storage temperature Tstg –40 to +85 °C Note: 1. Maximum 50% duty cycle, maximum 1 µs pulse width Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 50 — — mW Kink free Threshold current Ith — 45 70 mA Slope efficiency η 0.35 0.55 0.7 mW/mA 40 mW/ I (45 mW) – I (5 mW) Operating current Iop — 140 170 mA PO = 50 mW LD Operating voltage Vop — 2.3 2.7 V PO = 50 mW Lasing wavelength λp 775 785 795 nm PO = 50 mW Beam divergence (parallel) θ// 8 9.5 12 deg. PO = 50 mW, FWHM Beam divergence (perpendicular)θ⊥ 18 23 28 deg. PO = 50 mW, FWHM Monitor current Is 25 — 150 µA PO = 5 mW, VR (PD) = 5 V Astigmatism AS — 5 — µm PO = 5 mW, NA = 0.4

Typical Characteristic Curves

Typical Characteristic Curves (cont)