HL6339G HITACHI

Document overview

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Technical content

Features

  • Optical output power : 5 mW (CW)
  • Visible light output : 633 nm Typ (nearly equal to He-Ne gas laser)
  • Low operating current : 55 mA Typ
  • Low operating voltage : 2.3 V Typ
  • TM mode oscillation LDLD PDPD 11 33 Internal Circuit
  • HL6342G Internal Circuit
  • HL6339G Package Type
  • HL6339G/42G: G2

Rev.1, Apr. 2002, page 2 of 8 Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power P O 5m W LD reverse voltage V R(LD) 2V PD reverse voltage V R(PD) 30 V Operating temperature Topr –10 to +40 °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Optical output power P O 5 ——m W K i n k f r e e Threshold current Ith — 45 60 mA Operating current I OP —5 57 0m A P O = 5 mW Operating voltage V OP —2 . 3 2 . 7 V P O = 5 mW Slope efficiency ηs 0.40 0.65 0.90 mW/mA 3 (mW) / (I (4mW) – I(1mW) ) Lasing wavelength λp 630 633 635 nm P O = 5 mW Beam divergence parallel to the junction θ// 6 8 11 deg. P O = 5 mW Beam divergence parpendicular to the junction θ⊥ 25 30 35 deg. P O = 5 mW Monitor current I S 0.04 0.08 0.14 mA P O = 5 mW, VR(PD) = 5 V

Rev.1, Apr. 2002, page 3 of 8 Typical Characteristic Curves Slope Efficiency vs. Case Temperature Case temperature, TC (˚C) Case temperature, TC (˚C) Slope efficiency, ηs (mW/mA) Optical output power, PO (mW) Monitor current, IS (mA) Optical Output Power vs. Monitor Current Threshold current, Ith (mA) Threshold Current vs. Case Temperature –10 0 40302010 –10 0 40 3020100 0.2 0.4 0.6 0.8 1.0 0.12 0.10 0.08 0.06 0.04 0.02 04 213 50 100 VR(PD) = 5V TC = 25˚C Optical output power, PO (mW) Forward current, IF (mA) Optical Output Power vs. Forward Current 807006 0 3010 20 40 50 TC = –10˚C 25˚C 40˚C

Rev.1, Apr. 2002, page 4 of 8 Typical Characteristic Curves (cont) Lasing Spectrum Wavelength, λp (nm) 631 632 633 634 635Relative intensity Polarization Ratio vs. Optical Output Power Optical output power, PO (mW) 03 214 5 Polarization ratio 100 150 200 Monitor Current vs. Case Temperature –10 0 10 20 30 40 Monitor current, IS (mA) 0.05 0.10 0.15 0.20 250 Case temperature, TC (˚C) Lasing Wavelength vs. Case Temperature Lasing wavelength, λp (nm) 624 628 636 640 632 –10 0 10 20 30 40 Case temperature, TC (˚C) PO = 5mW PO = 3mW PO = 1mW TC = 25˚C PO = 15mW VR = 5V PO = 5mW TC = 25˚C NA = 0.55

Rev.1, Apr. 2002, page 5 of 8 Typical Characteristic Curves (cont) 001 3 2 45 Astigmatism, AS (mm) Astigmatism vs. Optical Output Power 100 Survival rate (%) Applied voltege (kV) 02 3 10.5 1.5 2.5 Reverse (C : 100pF, R : 1.5kΩ ) N = 10pcs O ≤ 10% judgment 0.2 0.4 0.6 0.8 1.0 –40 –30 –20 –10 0 40 302010 Angle, θ (deg.) Ralative intensity Far Field Pattern 0 400 200 600 100 Survival rate (%) Applied voltege (V) Electrostatic Destrucution Optical output power, PO (mW) PO = 5mW TC = 25˚C TC = 25˚C NA = 0.55 Perpendicular Parallel Forward (C : 100pF, R : 1.5kΩ ) N = 10pcs O ≤ 10% judgment Electrostatic Destrucution

Rev.1, Apr. 2002, page 6 of 8 Package Dimensions Hitachi Code JEDEC JEITA Mass (reference value) LD/G2 1.1 g 1 2 3 9.0 +0 –0.025φ 1.0 ± 0.1 0.4+0.1 (0.65) (90˚) φ 7.2+0.3 –0.2φ φ 6.2 ± 0.2 ( 2.0)φ Emitting Point 2.451.5 ± 0.1 0.3 Glass φ 2.54 ± 0.35 As of January, 2002 Unit: mm

Rev.1, Apr. 2002, page 7 of 8 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent.

Rev.1, Apr. 2002, page 8 of 8 Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg URL http://www.hitachisemiconductor.com/ Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong URL : http://semiconductor.hitachi.com.hk Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Semiconductor (America) Inc.

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