HL6335G HITACHI

Document overview

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Technical content

Features

  • Optical output power : 5 mW CW
  • Visible light output : 635 nm Typ
  • Low operating current : 25 mA Typ
  • Low aspect ratio : 1.2 Typ (almost circular beam)
  • Operating temperature : +50°C
  • TM mode oscillation LDPD 1 3 Internal Circuit
  • HL6335G Package Type
  • HL6335/36G: G2 LDPD 1 3 Internal Circuit
  • HL6336G

Rev.3, Mar. 2002, page 2 of 10 Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power P O 5m W Pulse optical output power P O(Pulse) 6 * mW LD reverse voltage V R(LD) 2V PD reverse voltage V R(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Note: Pulse condition : Pulse width ≤ 1 µs, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Optical output power P O 5 ——m W K i n k f r e e Threshold current Ith — 20 30 mA Slope efficiency ηs 0.5 0.8 1.1 mW/mA 3 (mW) / (I (4mW) – I(1mW) ) Operating current I OP —2 54 0m A P O = 5 mW Operating voltage V OP —2 . 4 2 . 7 V P O = 5 mW Lasing wavelength λp 630 635 640 nm P O = 5 mW Beam divergence parallel to the junction θ// 13 17 25 deg. P O = 5 mW Beam divergence parpendicular to the junction θ⊥ 16 20 25 deg. P O = 5 mW Aspect ratio θ⊥ /θ// — 1.2 1.5 — P O = 5 mW Monitor current I S 0.03 0.07 0.12 mA P O = 5 mW, VR(PD) = 5 V Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as by ESD. 2. The wavefront performance is not guaranteed. 3. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board.

Rev.3, Mar. 2002, page 3 of 10 Typical Characteristic Curves Slope Efficiency vs. The Case Temperature Case temperature, TC (˚C) Case temperature T C (˚C) –10 0 50 40302010 –10 0 50 40302010 Slope efficiency, ηs (mW/mA) 0.2 0.4 0.6 1.0 1.4 Optical output power, P O (mW) Monitor current, IS (mA) 0.10 0.08 0.06 0.04 0.02 04 21350 Monitor Current vs.Optical Output Power 100 Threshold current, Ith (mA) Threshold Current vs. The Case Temperature VR(PD) = 5V TC = 25˚C Optical output power, PO (mW) Foward current, I F (mA) Opticai Output Power vs. Foward Current 603010 20 40 50 50˚C 1.2 0.8 25˚C 40˚C TC = 10˚C

Rev.3, Mar. 2002, page 4 of 10 Lasing Spectrum Wavelength, /K6C p (nm) 625 630 635 640 645Relative intensity Polarization Ratio vs. Optical Output Power Optical output power, PO (mW) 03 214 5 Polarization ratio 100 150 200 Monitor Current vs. The Case Temperature –1 00 1 02 03 04 0 Monitor current, IS (mA) 0.04 0.06 0.08 0.10 250 Case temperature, TC (°C) Lasing Wavelength vs. The Case TemperatureLasing wavelength, /K6C p (nm) 625 630 640 645 635 –10 0 10 20 30 40 50 Case temperature TC (°C) PO = 5mW PO = 3mW PO = 1mW TC = 25°C PO = 5mW VR = 5V PO = 5mW TC = 25°C NA = 0.55 0.02

Rev.3, Mar. 2002, page 5 of 10 001 3 2 45 Astigmastism vs. Optical Output Power 0.2 0.4 0.6 0.8 1.0 –40 –30 –20 –10 0 40 302010 Angle, θ (deg.) Relative intensity Far Field Pattern Optical output power, PO (mW) PO = 5mW TC = 25˚C TC = 25˚C NA = 0.55 100 Survival rate (%) 0 0.5 1.0 1.5 Applied voltage (kV) 0 200 100 300 100 Survival rate (%) Applied voltage (V) Electrostatic Destruction Forward (C : 100pF, R : 1.5kΩ ) N=10pcs O ≤ 10% judgment Astigmastism, AS (µm) Parallel Reverce (C : 100pF, R : 1.5kΩ ) N=10pcs O ≤ 10% judgment Perpendicular Electrostatic Destruction

Rev.3, Mar. 2002, page 6 of 10 Package Dimensions Hitachi Code JEDEC JEITA Mass (reference value) LD/G2 1.1 g 1 2 3 9.0 +0 –0.025φ 1.0 ± 0.1 0.4+0.1 (0.65) (90°) 7.2+0.3 –0.2φ φ 6.2 ± 0.2 ( 2.0)φ Emitting Point 2.451.5 ± 0.1 9 ± 13 – φ 0.45 ± 0.1 3.5 ± 0.2 0.3 Glass φ 2.54 ± 0.35 The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Note: 1. Unit: mm 12° *1 12° *1

Rev.3, Mar. 2002, page 7 of 10 The Cautions on the Handing of HL6335G/36G As laser diode differ from silicon devices, the area of safe operation (ASO) of laser diodes is not decided by power consumption alone, but optical output must be considered from view point of optical damage. These products are more sensitive to static electricity or an surge current than the conventional product. The following is test data of ESD (electric static damage). The operating condition should be within 5 mW and the working please should be keep small static electricity level such as 20 V less and small surge current such as 40 mA less from out. N = 5 R = 0 C = 200pF Forward : HL6335G : HL6312G 100 0 200 400 Applied voltage V CC (V) 1. Electrostatic destructive examination data Survival rate (%) 100 Survival rate (%) 100 Survival rate (%) 100 Survival rate (%) 600 800 0 0.5 1.0 1.5 Applied voltage VCC (kV) 2.52.0 3.0 0 0.5 1.0 1.5 Applied voltage VCC (kV) 2.52.0 3.002 0 4 0 6 0 Applied voltage VCC (V) 10080 120 N = 5 R = 1.5kΩ C = 100pF Forward N = 5 R = 1.5kΩ C = 100pF Reverse Step stress test (5 times/voltage) Failure criteria ∆I OP ≥ 10%VCC C DUT R N = 5 R = 0 C = 200pF Reverse

Rev.3, Mar. 2002, page 8 of 10 600 100 200 300 400 500Applied voltage, VCC (V) 0 0.002 0.004 Capacitance, CO (µF) 0.0080.006 0.010 R = 1.5kΩ , C = 100pF R = 0, C = 200pF Step stress tast (5 times/voltage) Failure criteria ∆IOP ≥ 10% VCC CC ODUT R R O = 2.2kΩ 2. Clamp Capacitance vs. ESD of HL6335G/36G 120 100 distribution of IOP (mA) Applied current, IF (mA) 10µ 100µ 1m 100m10m 1 Applied puls width, PW (s) TC = 25˚C 1 shot n = 10pcs 3. Applied puls width vs. Applied current IF PW N (pcs) 01 0 2 0 4 0 5 030 60 Destructive optical output power, PCOD (mW) 4. Catastrophic optical damage of HL6335G/36G

Rev.3, Mar. 2002, page 9 of 10 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent.

Rev.3, Mar. 2002, page 10 of 10 Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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