HKF10100CT HUASHAN

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Shantou Huashan Electronic Devices Co.,Ltd. 10A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ F e a t u r e s █ Package „ Schottky Barrier Chip „ Guard Ring Die Construction for Transient Protection „ Low Power Loss,High Efficiency „ High Surge Capability „ High Current Capability and Low Forward Voltage Drop „ For Use in Low Voltage,High Frequency Inverters,Free Wheelings, and Polarity Protection Applications █ Maximum Ratings █ Electrical Chatacteristic @Ta=25℃unless otherwise specified Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate current by 20%. Characteristic Symbol Min Max Unit Condition Forward V oltage Drop V FM 0.75 0.85 0.85 0.95 V I F=5A,TC=125℃ IF=5A,TC=25℃ IF=10A,TC=125℃ IF=10A,TC=25℃ P e a k R e v e r s e C u r r e n t a t R a t e d D C B l o c k i n g V o l t a g e IRM 0.1 50 mA VR = VRRM T C=25℃ TC=125℃ Typical Junction Capacitance(Note 2) Cj 300 pF Typical Thermal Resistance Junction to Case(Note 1) Rth-j 4.0 ℃/W V oltage Rate Of Change dV/dt 10000 V/s Isolation Breakdown V oltage(heatsink to surface ， t=3s Viso 2000 V Notes:1、Thermal resistance junction to case mounted on heatsink. 2、Measured at 1.0 MHz and Applied Reverse V oltage of 4.0V DC. HKF10100CT 1―Pin A1 2―Pin K 3―Pin A2 TO-220F „ IF（AV）——Average Recified Output Current@Tc=100℃…………………Double Dies 10A „ IFSM——Non-Repetitive Peak Forward Surge Current （Single Die，60HZ）………120A

Shantou Huashan Electronic Devices Co.,Ltd. █ PERFORMANCE CURVES HKF10100C