Overview
HGTP10N50F1D is listed in the Logic IC category. Available datasheets include documents from Intersil Corporation.
Summary
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.
Source title
HGTP10N50F1D Datasheet(PDF) - Intersil Corporation