Overview
HGTG12N60C3D is listed in the Logic IC category. Available datasheets include documents from Fairchild Semiconductor, Harris Corporation, Intersil Corporation and 1 more.
Summary
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Description
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in antiparallel with the IGBT is the development type TA49061.
Source title
HGTG12N60C3D Datasheet(PDF) - Harris Corporation