HD965 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ LOW FREQUENCY AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage 20 V IC=1mA, I B=0 BVEBO Emitter-Base Breakdown Voltage 7 V IE=10μA，IC=0 ICBO Collector Cut-off Current 100 nA VCB=10V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=7V, IC=0 HFE（1） DC Current Gain 180 800 VCE=2V, IC=0.5A HFE（2） DC Current Gain 150 VCE=2V, IC=2A VCE(sat) Collector- Emitter Saturation Voltage 1 V IC=3A, IB=0.1A fT Current Gain-Bandwidth Product 150 MHz VCE=6V, IC=50mA Cob Output Capacitance 50 pF VCB=20V, IE=0，f=1MHz 1―Emitter，E 2―Collector，C 3―Base，B TO-92 HD965 N PN S I L I C O N T R A N S I S T O R