HCR1C60 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=1A) * Low On-State Voltage (1.2V(Typ.)@ ITM) █ General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. █ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified） HCR1C60
Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 200 uA VAK=VDRM Ta=25℃ Ta=125℃ VTM Peak On-State Voltage (1) 1.2 1.7 V ITM=1A,PEAK IGT Gate Trigger Current（2） 200 500 uA VAK =6V(DC), RL=100 ohm Ta=25℃ Ta= -40℃ VGT Gate Trigger Voltage (2) 0.8 1.2 V VAK =6V(DC), RL=100 ohm Ta=25℃ Ta= -40℃ VGD Non-Trigger Gate Voltage 0.2 V VAK =12V, RL=100 ohm Ta=125℃ IH Holding Current 2.0 5.0 mA IT=100mA,Gate open, Ta=25℃ Ta= -40℃ Rth(j-c) Thermal Resistance 50 ℃/W Junction to Case Rth(j-a) Thermal Resistance 160 ℃/W Junction to Ambient dv/dt Critical Rate of Rise Off-state Voltage 200 V/µs V D=VDRM67% exponential Waveform Rjk=1Kohm Tj=125℃ 1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%. 2. RGK current is not included in measurement. █ Performance Curves FIGURE 1 – Gate Characteristics FIGURE 2 – Maximum CaseTemperture Gate Cu rrent (mA) Average On -State Current (mA) HCR1C60 Gate Voltage (v) Max. Allowable Case Temperture (°c)