HCR100 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series Sensitive Gate Silicon Controlled Rectifiers █ Features * Repetitive Peak Off-State Voltage : 400V thru 600V * R.M.S On-State Current(IT(RMS)=0.8A) * Low On-State Voltage (1.2V(Typ.)@ ITM) █ General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. █ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified）
Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series █ Electrical Characteristics（Ta=25℃, Rgk=1K ohm unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 200 uA VAK=VDRM or VRRM Ta=25℃ Ta=125℃ VTM Peak On-State Voltage (1) 1.2 1.7 V ITM=1A, Peak IGT Gate Trigger Current（2） 200 uA VAK =7V, RL=100 ohm VGT Gate Trigger Voltage (2) 0.8 1.2 V VAK =7V, RL=100 ohm Ta=25℃ Ta=-40℃ VGD Non-Trigger Gate Voltage 0.2 V VAK =12V, RL=100 ohm Ta=125℃ IH Holding Current 5.0 mA VAK =12V,Gate open, initiating current=50mA Ta=25℃ Ta=-40℃ Rth(j-c) Thermal Resistance 60.0 ℃/W Junction to Case Rth(j-a) Thermal Resistance 150 ℃/W Junction to Ambient 1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%. 2. R GK current is not included in measurement █ Performance Curves FIGURE 1 – HCR100-8 CURRENT DERATING FIGURE 2 – HCR100-8 CURRENT DERATING (REFERENCE: CASE TEMPERATURE) (REFERENCE: AMBIENT TEMPERATURE) Ta, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (℃) Tc, MAX ALLOWABLE CASE TEMPERATURE (℃) IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON -STATE CURRE NT