HCF10C60 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor contro l cicuit in power tool,inrush current limit circuit and heating control system. █ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified） HCF10C60
Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 200 uA VAK=VDRM Ta=25℃ Ta=125℃ VTM Peak On-State Voltage (1) 1.6 V ITM=20A,tp=380µs IGT Gate Trigger Current（2） 15 mA VAK =6V(DC), RL=10 ohm VGT Gate Trigger Voltage (2) 1.5 V VAK =6V(DC), RL=10 ohm Ta=25℃ VGD Non-Trigger Gate Voltage 0.2 V VAK =12V, RL=100 ohm Ta=125℃ IH Holding Current 20 mA IT=100mA,Gate open, Ta=25℃ Rth(j-c) Thermal Resistance 1.3 ℃/W Junction to Case Rth(j-a) Thermal Resistance 60 ℃/W Junction to Ambient dv/dt Critical Rate of Rise Off-state Voltage 200 V/µs Linear slope up to VD=VDRM67% Gate open Tj=125 ℃ 1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%. 2. RGK current is not included in measurement █ Performance Curves FIGURE 1 – Gate Characteristics FIGURE 2 – Maximum CaseTemperture Gate Current (mA) Average On -State Current (mA) Gate Voltage (v) Max. Allowable Case Temperture (°c) HCF10C60