HC8050 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO HFE V BE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO fT Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter V oltage Collector- Emitter Saturation V oltage Base- Emitter Saturation V oltage Collector-Base Breakdown V oltage Collector-Emitter Breakdown V oltage Emitter- Base Breakdown V oltage Current Gain-Bandwidth Product 100 0.1 0.1 500 0.5 1.2 μA μA V V V V V V MHz V CB=35V , IE=0 VEB=6V , IC=0 VCE=1V , IC=100mA VCE=1V , IC=800mA VCE=1V , IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 VCE=10V , IC=50mA █ h FE Classification B C D E 85—160 120 —200 160 —300 270 —500 1―Emitter，E 2―Collector，C 3―Base，B TO-92 HC8050
Shantou Huashan Electronic Devices Co.,Ltd. HC8050