HC5039 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS high Voltage power switch switching Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 800 V IC=1mA, I E=0 BVCEO Collector-Emitter Breakdown Voltage 400 V IC=5mA, I B=0 BVEBO Emitter-Base Breakdown Voltage 7 V IE=1mA，IC=0 ICBO Collector Cut-off Current 10 μA VCB=500V, IE=0 IEBO Emitter Cut-off Current 10 μA VEB=7V, IC=0 HFE *DC Current Gain 10 VCE=5V, IC=0.3A VCE(sat) *Collector- Emitter Saturation Voltage 1.5 V IC=2.5A, IB=0.5A VBE(sat) *Base-Emitter Saturation Voltage 2.0 V IC=2.5A, IB=0.5A fT Current Gain-Bandwidth Product 10 MHz VCE=5V, IC=0.1A Cob Output Capacitance 40 pF VCB=10V, f=1MHz tON Turn On Time 1 μS tSTG Storage Time 3 μS tF Fall Time 0.8 μS Vcc=150V，Ic=2.5A， Ib1=-Ib2=0.5A，RL=60Ω *Pulse Test：PW≤300μs，Duty cycle≤2% Pulse 1―Base，B 2―Collector，C 3―Emitter，E TO-220 HC5039 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. HC5039 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. HC5039 NPN S I L I C O N T R A N S I S T O R