HC4106 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS High Breakdown V oltage And High Reliability.Fast Switching Speed. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 500 V IC=1mA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 400 V IC=5mA, I B=0 BVEBO Emitter-Base Breakdown V oltage 7 V IE=1mA，IC=0 ICBO Collector Cut-off Current 10 μA VCB=400V , IE=0 IEBO Emitter Cut-off Current 10 μA VEB=5V , IC=0 HFE（1） DC Current Gain 15 50 VCE=5V , IC=0.8A HFE（2） DC Current Gain 10 VCE=5V , IC=4A HFE（3） DC Current Gain 10 VCE=5V , IC=10mA VCE(sat) Collector- Emitter Saturation V oltage 0.8 V IC=4A, IB=0.8A VBE(sat) Base-Emitter Saturation V oltage 1.5 V IC=4A, IB=0.8A fT Current Gain-Bandwidth Product 20 MHz VCE=10V ,IC=0.8A Cob Output Capacitance 80 pF VCB=10V , IE=0，f=1MHz tON Turn-On Time 0.5 μS VCC=10V ,IC=5A tSTG Storage Time 2.5 μS IB1=1A，IB2=-2A tF Fall Time 0.3 μS RL=40ohms █ h FE Classification L M N 15—30 20—40 30—50 1―Base，B 2―Collector，C 3―Emitter，E TO-220 HC4106 NPN S I L I C O N T R A N S I S T O R