HC2344 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS High V oltage switching，AF Power Amp. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 180 V IC=1mA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 160 V IC=1mA, I B=0 BVEBO Emitter-Base Breakdown V oltage 6 V IE=1mA，IC=0 ICBO Collector Cutoff Current 10 μA VCB=120V , IE=0 IEBO Emitter-Base Cutoff Current 10 μA VEB=4V , IC=0 HFE DC Current Gain 60 200 VCE=5V , IC=300mA VCE(sat) Collector- Emitter Saturation V oltage 0.3 1.0 V IC=500mA, IB=50mA VBE Base- Emitter V oltage 1.5 V VCE=5V ,IC=10A Cob Output Capacitance 23 pF VCB=10V , f=1MHz fT Current Gain-Bandwidth Product 100 MHz VCE=10V ,IC=50mA， ton Turn-On Time 0.15 μS tf Fall Time 0.48 μS tstg Storage Time 0.81 μS See specified test circuit █ h FE Classification D E 60—120 100—200 NPN S I L I C O N TRANSISTOR HC2344 1―Base，B 2―Collector，C 3―Emitter, E TO-220
Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HC2344
Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N TRANSISTOR HC2344