HC1417 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS High Frequency Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 20 V IC=100μA，IE=0 BVCEO Collector-Emitter Breakdown Voltage 15 V IC=1mA，IB=0 BVEBO Emitter-Base Breakdown Voltage 3 V IE=100μA，IC=0 ICBO Collector Cut-off Current 0.1 μA VCB=10V, IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=3V, IC=0 HFE DC Current Gain 54 146 VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage 0.5 V IC=10mA, IB=1mA VBE(sat) Base-Emitter Saturation Voltage 1.42 V IC=10mA, IB=1mA fT Current Gain-Bandwidth Product 100 300 MHz VCE=10V, IC=50mA Cob Output Capacitance 1.4 pF VCB=10V,IE=0，f=1MHz NF Noise Figure 5.5 dB VCE=6V,IC=1mA,RG=50O █ hFE Classification F G H 54—80 72--108 97--146 1―Emitter，E 2―Collector，C 3―Base，B TO-92 HC1417 NPN S I L I C O N T R A N S I S T O R