HC114E HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Switching Circuit，Interface Circuit. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 50 V IC=10μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=0.1mA, I B=0 ICBO Collector Cut-off Current 0.1 μA VCB=40V, IE=0 ICEO Collector Cut-off Current 0.5 μA VCE=40V, IB=0 IEBO Emitter Cut-off Current 195 250 360 μA VEB=5V, IC=0 HFE DC Current Gain 30 VCE=5V, IC=5mA VCE(sat) Collector- Emitter Saturation Voltage 0.1 0.3 V IC=10mA, IB=0.5mA VI（off） Input Off Voltage 0.8 1.1 1.5 V VCE=5V, IC=0.1mA VI（on） Input On Voltage 1.0 2.0 4.0 V VCE=0.2V, IC=10mA R1 Input Resistor 7.0 10 13 Kohm R2/R1 Resistor Ratio 0.8 1.0 1.2 fT Current Gain-Bandwidth Product 250 MHz VCE=-10V, IC=-5mA 1―Emitter，E 2―Collector，C 3―Base，B TO-92S HC114E NPN DIGITAL T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. HC114E