HBTA12A60 HUASHAN
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Shantou Huashan Electronic Devices Co.,Ltd. INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=12A) * High Commutation dv/dt █ General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） █ Electrical Characteristics（Ta=25℃） Symbol Items Min. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VD=VDRM, Single Phase,Half Wave, TJ=125℃ VTM Peak On-State Voltage 1.4 V IT=12A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 30 mA VD=6V, RL=10 ohm I- GT1 Gate Trigger Current（Ⅱ） 30 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current（Ⅲ） 30 mA VD=6V, RL=10 ohm V+ GT1 Gate Trigger Voltage（Ⅰ） 1.5 V VD=6V, RL=10 ohm V- GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD=6V, RL=10 ohm V- GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD=6V, RL=10 ohm VGD Non-Trigger Gate Voltage 0.2 V TJ=125℃,VD=1/2VDRM (dv/dt)c Critical Rate of Rise of Off-State Voltage at Commutation 10 V/µS TJ=125℃,VD=2/3VDRM (di/dt)c=-4.0A/ms Rth(j-c) Thermal Resistance 3.3 ℃/W Junction to case IH Holding Current 20 mA ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non -Repetitive)………………… 119/130A HBTA12A60
Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBTA12A60
Shantou Huashan Electronic Devices Co.,Ltd. HBTA12A60