HBT137F-600 HUASHAN
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Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC (TO-220F PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=8A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） █ G e n e r a l D e s c r i p t i o n This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. █ Absolute Maximum Ratings （Ta=25℃） █ Electrical Characteristics （Ta=25℃） Symbol Items Min Max Unit Conditions IDRM Repetitive Peak Off-State Current 1.0 mA VD=VDRM,Single Phase,Half Wave, TJ=125℃ VTM Peak On-State Voltage 1.6 V IT=10A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 25 mA V D=6V , RL=10 ohm I-GT1 Gate Trigger Current（Ⅱ） 25 mA V D=6V , RL=10 ohm I-GT3 Gate Trigger Current（Ⅲ） 25 mA V D=6V , RL=10 ohm V+GT1 Gate Trigger Voltage（Ⅰ） 1.5 V V D=6V , RL=10 ohm V-GT1 Gate Trigger Voltage（Ⅱ） 1.5 V V D=6V , RL=10 ohm V-GT3 Gate Trigger Voltage （Ⅲ） 1.5 V V D=6V , RL=10 ohm VGD Non-Trigger Gate Voltage 0.2 V T J=125℃,VD=1/2VDRM (dv/dt)c Critical Rate of Rise of Off-State Voltage at Commutation 5.0 V/µS T J=125℃,VD=2/3VDRM (di/dt)c=-3A/ms IH Holding Current 10 mA Rth(j-c) Thermal Resistance 3.8 ℃/W Junction to case ITSM——Surge On-State Current (One Cycl e, 50/60Hz,Peak,Non-Repetitive) ………………… 70/77A HBT137F-600 1 2 3 TO-220F
Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBT137F-600
Shantou Huashan Electronic Devices Co.,Ltd. HBT137F-600