HBS170 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description 1- D 2-G 3-S TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. █ Features z High density cell design for low Rds(on). z Voltage controlled small signal switch. z Rugged and reliable. z High saturation current capability. █ Maximum Ratings（Ta=25℃ unless otherwise specified） █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions BVDSS Drain-Source Breakdown Voltage 60 V VGS=0V, ID=100uA IDSS Zero Gate Voltage Drain Current 0.5 uA VDS =25V, VGS=0V IGSSF Gate – Body Leakage, Forward 10 nA VGS=15V , VDS =0V VGS(TH) Gate Threshold Voltage 0.8 3.0 V VDS = VGS , ID=1mA RDS(ON) Static Drain-Source On-Resistance 5 Ω VGS=10V, ID=200mA gFS Forward Transconductance 320 mS VDS=10V, ID=200mA Ciss Input Capacitance 24 40 pF Coss Output Capacitance 17 30 pF Crss Reverse Transfer Capacitance 7 10 pF VDS = 10 V, VGS = 0 V, f = 1.0 MHz ton Turn - On Time 10 nS toff Turn - Off Time 10 nS VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 Ω
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 █ Performance Curves
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 █ Performance Curves
Shantou Huashan Electronic Devices Co.,Ltd. HBS170 █ Performance Curves