HBDW93C HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO(SUS) Collector-Emitter Sustaining V oltage 100 V IC=100mA, IB=0 ICEO Collector Cut-off Current 1 mA VCE=100V , IB=0 IEBO Emitter-Base Cutoff Current 2 mA VEB=5V , IC=0 ICBO Collector Cut-off Current 100 μA VCB=100V , IE=0 HFE（1） DC Current Gain 1000 VCE=3V , IC=3A HFE（2） 750 20000 VCE=3V , IC=5A HFE（3） 100 VCE=3V , IC=10A VCE(sat1) Collector- Emitter Saturation V oltage 2 V IC=5A, IB=20mA VCE(sat2) Collector- Emitter Saturation V oltage 3 V IC=10A, IB=100mA VBE(sat1) Base-Emitter Saturation V oltage 2.5 V IC=5A,IB=20mA VBE(sat2) Base-Emitter Saturation V oltage 4 V IC=10A,IB=100mA NPN DARLINGTON TRANSISTOR HBDW93C 1―Base，B 2―Collector，C 3―Emitter, E TO-220
Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HBDW93C