HBD681 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Medium Power Linear switching. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ 电参数 （ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 200 μA VCB=100V , IE=0 IEBO Emitter Cut-off Current 2 mA VEB=5V , IC=0 ICES Collector Cut-off Current 500 μA VCE=100V , VEB=0 *HFE DC Current Gain 750 VCE=3V , IC=1.5mA *VCE(sat) Collector- Emitter Saturation V oltage 2.5 V IC=1.5A, IB=30mA VBE(on) Base-Emitter On V oltage 2.5 V VCE=3V , IC=1.5A VCEO(SUS) Collector-Emitter Sustaining V oltage 100 IC=50mA, IB=0 * Pulse Test:PW=300µS,Duty Cycie=1.5% Pulsed N P N S I L I C O N T R A N S I S T O R HBD681 1―Emitter, E 2―Collector，C 3―Base，B TO-126F
Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T R A N S I S T O R HBD681