HBD241C HUASHAN
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO(SUS) Collector-Emitter Sustaining V oltage 100 V IC=30mA, IB=0 ICEO Collector Cut-off Current 300 nA VCE=60V , IB=0 IEBO Emitter-Base Cutoff Current 1 mA VEB=5V , IC=0 ICES Collector Cutoff Current 200 μA VCE=100V , VBE=0 HFE（1） DC Current Gain 25 VCE=4V , IC=1A HFE（2） 10 VCE=4V , IC=3A VCE(sat) Collector- Emitter Saturation V oltage 1.2 V IC=3A, IB=0.6A VBE(on) Base- Emitter On V oltage 1.8 V VCE=4V ,IC=3A, NPN SILICON TRANSISTOR HBD241C 1―Base，B 2―Collector，C 3―Emitter, E TO-220