HBD195 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS . .Medium Power Amplifie. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown V oltage 20 V IC=10mA, IB=0 ICBO Collector Cut-off Current 100 nA VCB=40V , IE=0 IEBO Emitter Cut-off Current 100 nA VEB=8V , IC=0 HFE（1） DC Current Gain 140 600 VCE=2V , IC=0.5A HFE（2） DC Current Gain 70 VCE=2V , IC=5A VCE(sat) Collector- Emitter Saturation V oltage 1 V IC=6A, IB=0.15A VBE Base-Emitter V oltage 1.5 V VCE=2V , IC=4A fT Current Gain-Bandwidth Product 100 MHz VCE=2V ,IC=500mA Cob Output Capacitance 40 pF VCB=10V , IE=0，f=1MHz Pulse Test：PW=10Ms（max）,Duty Cycle=30%（min） █ hFE Classification Y G R B L 140 —240 200 —400 300 —600 N P N S I L I C O N T R A N S I S T O R HBD195 TO-126ML 1―Emitter，E 2―Collector，C 3―Base，B
Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T R A N S I S T O R HBD195