HB857 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS LOW FREQUENCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -70 V IC=-10μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-50mA, I B=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -1 μA VCB=-50V, IE=0 HFE（1） DC Current Gain 60 320 VCE=-4V, IC=-1A HFE（2） DC Current Gain 35 VCE=-4V, IC=-0.1A VCE(sat) Collector- Emitter Saturation Voltage -1 V IC=-2A, IB=-0.2A VBE(on) Base-Emitter On Voltage -1 V VCE=-4V, IC=-1A ft Current Gain-Bandwidth Product 15 MHz VCE=-4V, IC=-0.5A, █ h FE Classification B C D 60—120 100—200 160—320 P N P S I L I C O N T R A N S I S T O R HB857 1―Base，B 2―Collector，C 3―Emitter, E TO-220