HB834 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage -60 V IC=-50mA, I B=0 ICBO Collector Cut-off Current -100 μA VCB=-60V, IE=0 IEBO Emitter Cut-off Current -100 μA VEB=-7V, IC=0 HFE（1） DC Current Gain 60 200 VCE=-5V, IC=-0.5A HFE（2） DC Current Gain 20 VCE=-5V, IC=-3A VCE(sat) Collector- Emitter Saturation Voltage -0.5 -1 V IC=-3A, IB=-0.3A VBE(on) Base-Emitter On Voltage -0.7 -1 V VCE=-5V, IC=-0.5A ft Current Gain-Bandwidth Product 9 MHz VCE=-5V, IC=-0.5A, Cob Output Capacitance 150 pF VCB=-10V, IE=0，f=1MHz tON Turn-On Time 0.4 μS tSTG Storage Time 1.7 μS tF Fall Time 0.5 μS I B1= -IB2=-0.2A VCC=-30V █ h FE Classification O Y 60—120 100—200 P N P S I L I C O N T R A N S I S T O R HB834 1―Base，B 2―Collector，C 3―Emitter, E TO-220
Shantou Huashan Electronic Devices Co.,Ltd. HB834