HB1274 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low frequency power amplifier Applications. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -60 V IC=-1mA, IE=0 BVCEO Collector-Emitter Breakdown V oltage -60 V IC=-5mA, I B=0 BVEBO Emitter-Base Breakdown V oltage -6 V IE=-1mA，IC=0 HFE（1） DC Current Gain 70 280 VCE=-5V , IC=-0.5A HFE（2） DC Current Gain 20 VCE=-5V , IC=-3A VCE(sat) Collector- Emitter Saturation V oltage -0.4 -1.0 V IC=-2A, IB=-0.2A VBE Base-Emitter V oltage -0.8 -1.0 V VCE=-5V , IC=-0.5A ICBO Collector Cut-off Current -100 μA VCB=-40V , IE=0 IEBO Emitter Cut-off Current -100 μA VEB=-4V , IC=0 fT Current Gain-Bandwidth Product 100 MHz VCE=-5V , IC=-0.5A Cob Output Capacitance 60 pF VCB=-10V , f=1MHz █ h FE Classification Q R S 70—140 100—200 140—280 1―Base，B 2―Collector，C 3―Emitter，E TO-220F HB1274 PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. HB1274 PNP S I L I C O N T R A N S I S T O R