HB123D HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Power Amplifie █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 500 V IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown V oltage 400 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown V oltage 8 V IE=1mA，IC=0 ICBO Collector Cut-off Current 10 μ A VCB=500V , IE=0 HFE（1） DC Current Gain 10 65 VCE=5V , IC=300mA HFE（2） DC Current Gain 10 VCE=5V , IC=500mA VCE(sat) Collector- Emitter Saturation V oltage 0.3 V IC=100mA, IB=10mA NPN S I L I C O N T R A N S I S T O R HB123D TO-126ML 1―Emitter，E 2―Collector，C 3―Base，B