Overview
HAF1002L is listed in the Logic IC category. Available datasheets include documents from Hitachi Semiconductor, Renesas Technology Corp.
Summary
Silicon P Channel MOS FET Series Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit opertion to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Source title
HAF1002L Datasheet(PDF) - Renesas Technology Corp