H8050 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 0.1 μAV CB=35V , IE=0 IEBO Emitter Cut-off Current 0.1 μAV EB=6V , IC=0 HFE DC Current Gain 85 500 V CE=1V , IC=100mA
40 V CE=1V , IC=800mA
VBE Base- Emitter V oltage 1 V V CE=1V , IC=10mA VCE(sat） Collector- Emitter Saturation V oltage 0.5 V I C=800mA, IB=80mA VBE(sat) Base- Emitter Saturation V oltage 1.2 V I C=800mA,IB=80mA BVCBO Collector-Base Breakdown V oltage 40 V I C=100μA，IE=0 BVCEO Collector-Emitter Breakdown V oltage 25 V I C=2mA，IB=0 BVEBO Emitter- Base Breakdown V oltage 6 V I E=100μA，IC=0 Cob Output Capacacitance 9.0 pF V CB=10V ,IE=0，f=1MHz fT Current Gain-Bandwidth Product 100 MHz V CE=10V , IC=50mA █ h FE Classification B C D E 85—160 120 —200 160 —300 270 —500 1―Emitter，E 2―Base，B 3―Collector，C TO-92 H8050
Shantou Huashan Electronic Devices Co.,Ltd. H8050