H5551 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. H5551 N P N S I L I C O N T R A N S I S T O R █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW 1―Emitter，E 2―Base，B 3―Collector，C TO-92 █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 180 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 160 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 6 V IE=10μA，IC=0 ICBO Collector Cut-off Current 50 nA VCB=120V, IE=0 IEBO Emitter-Base Cut-off Current 50 nA VEB=4V, IC=0 HFE（1） DC Current Gain 80 VCE=5V, IC=1mA HFE（2） 80 280 VCE=5V, IC=10mA HFE（3） 30 VCE=5V, IC=50mA VCE(sat1) Collector- Emitter Saturation Voltage 0.15 V IC=10mA, IB=-1mA VCE(sat2) 0.2 V IC=50mA, IB=5mA VBE(sat1) Base-Emitter Saturation Voltage 1 V IC=10mA, IB=1mA VBE(sat2) 1 V IC=50mA, IB=5mA, fT Current Gain-Bandwidth Product 100 300 MHz VCE=10V, IC=10mA F=100MHz