H549 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Switching and Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 30 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 30 V IC=1mA，IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=1mA，IC=0 ICBO Collector Cut-off Current 15 nA VCB=30V, IE=0 HFE DC Current Gain 110 800 VCE=5V, IC=2mA VCE(sat1) Collector- Emitter Saturation Voltage 90 250 mV IC=10mA, IB=0.5mA VCE(sat2) 200 600 mV IC=100mA, IB=5mA VBE(sat1) Base-Emitter Saturation Voltage 0.7 1 V IC=10mA， IB=0.5mA VBE(sat2) 0.9 1.2 V IC=100mA， IB=5mA VBE(on) Base-Emitter On Voltage 580 660 700 mV VCE=5V， IC=2mA fT Current Gain-Bandwidth Product 300 MHz VCE=5V,IC=10mA Cob Output Capacitance 2.5 pF VCB=10V,IE=0，f=1MHz NF Noise Figure 1.2 4 dB VCE=5V,IC=0.2mA, f=1KHz，RG=2KO █ h FE Classification A B C 110—220 200—450 420—800 1―Collector，C 2―Base，B 3―Emitter，E TO-92 H549 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H549 NPN S I L I C O N T R A N S I S T O R