H5401 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. H5401 P N P S I L I C O N T R A N S I S T O R █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=150V. Collector Dissipation:Pc(max)=625mW 1―Emitter，E 2―Base，B 3―Collector，C TO-92 █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -160 V IC=-100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -150 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -50 nA VCB=-120V, IE=0 IEBO Emitter-Base Cut-off Current -50 nA VEB=-3V, IC=0 HFE（1） DC Current Gain 30 VCE=-5V, IC=-1mA HFE（2） 60 280 VCE=-5V, IC=-10mA HFE（3） 50 VCE=-5V, IC=-50mA VCE(sat1) Collector- Emitter Saturation Voltage -0.2 V IC=-10mA, IB=-1mA VCE(sat2) -0.5 V IC=-50mA, IB=-5mA VBE(sat1) Base-Emitter Saturation Voltage -1 V IC=-10mA, IB=-1mA VBE(sat2) -1 V IC=-50mA, IB=-5mA, fT Current Gain-Bandwidth Product 100 400 MHz VCE=-10V, IC=-10mA F=100MHz