H400S HUASHAN
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Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 25 V IC=10μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage 25 V IC=1mA, I B=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=10μA，IC=0 HFE（1） DC Current Gain 60 560 VCE=2V, IC=50mA HFE（2） DC Current Gain 30 VCE=2V, IC=1A VCE(sat) Collector- Emitter Saturation Voltage 0.1 0.3 V IC=0.5A, IB=50mA VBE(sat) Base-Emitter Saturation Voltage 0.85 1.2 V IC=0.5A, IB=50mA ICBO Collector Cut-off Current 1 μA VCB=20V, IE=0 IEBO Emitter Cut-off Current 1 μA VEB=4V, IC=0 ICEO Collector Cut-off Current 1 μA VCE=20V, IB=0 fT Current Gain-Bandwidth Product 180 MHz VCE=10V, IC=50mA Cob Output Capacitance 15 pF VCB=10V, IE=0，f=1MHz █ h FE Classification D E F G 60—120 100—200 160—320 280—560 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H400S NPN S I L I C O N T R A N S I S T O R