H380TM HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS High Frequency Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 35 V IC=100μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 30 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 4 V IE=100μA，IC=0 HFE DC Current Gain 40 240 VCE=12V, IC=2mA VCE(sat) Collector- Emitter Saturation Voltage 0.4 V IC=10mA, IB=1mA VBE(sat) Base-Emitter Voltage 1.0 V IC=10mA, IB=1mA ICBO Collector Cut-off Current 0.1 μA VCB=35V, IE=0 IEBO Emitter Cut-off Current 1.0 μA VEB=4V, IC=0 fT Current Gain-Bandwidth Product 100 400 MHz VCE=10V, IC=1mA Cob Output Capacitance 1.4 2.0 3.2 pF VCB=10V, IE=0，f=1MHz █ h FE Classification R O Y 40—80 70—140 120—240 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H380TM NPN S I L I C O N T R A N S I S T O R