H369 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS General Purpose Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -32 V IC=-100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage -20 V IC=-2mA, I B=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-100μA，IC=0 HFE（1） DC Current Gain 85 375 VCE=-1V , IC=-500mA HFE（2） 50 VCE=-10V , IC=-5mA HFE（3） 60 VCE=-1V , IC=-1A VCE(sat) Collector- Emitter Saturation V oltage -0.5 V IC=-1A, IB=-100mA VBE(on1) Base-Emitter On V oltage -1 V VCE=-1V , IC=-1A VBE(on2) Base-Emitter On V oltage -0.7 V VCE=-10V , IC=-5mA ICBO（1） Collector Cut-off Current -0.1 μA VCB=-25V , IE=0 ICBO（2） Collector Cut-off Current -10 μA VCB=-25V , IE=0,Ta=150℃ IEBO Emitter Cut-off Current -0.1 μA VEB=-5V , IC=0 fT Current Gain-Bandwidth Product 40 140 MHz VCE=-5V , IC=-50mA ,f=100MHz Cc Collector Capacitance 28 pF VCB=-10V , IE=0，f=1MHz 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H369 PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H369
Shantou Huashan Electronic Devices Co.,Ltd. H369