H3332 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS High V oltage switching Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 180 V IC=10μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 160 V IC=1mA, I B=0 BVEBO Emitter-Base Breakdown V oltage 6 V IE=10μA，IC=0 ICBO Collector Cut-off Current 0.1 μA VCB=120V , IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=4V , IC=0 HFE(1) DC Current Gain 100 400 VCE=5V , IC=100mA HFE(2) 80 VCE=5V , IC=10mA VCE(sat) Collector- Emitter Saturation V oltage 0.12 0.4 V IC=250mA, IB=25mA VBE(sat) Base-Emitter Saturation V oltage 0.85 1.2 V IC=250mA, IB=25mA fT Current Gain-Bandwidth Product 120 MHz VCE=10V , IC=50mA Cob Output Capacitance 8 pF VCB=10V , IE=0 tON Turn-on Time 50 nS tSTG Storage Time 1000 nS tF Fall Time 60 nS See specified test circuit █ h FE C l a s s i f i c a t i o n switching test Circuit： R S T 100—200 140—280 200—400 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H3332 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H3332 NPN S I L I C O N T R A N S I S T O R