H327 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ SWITCHING AND AMPLFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -50 V IC=-100μA, IE=0 BVCEO Collector-Emitter Breakdown V oltage -45 V IC=-10mA, IB=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-100μA，IC=0 ICBO Collector Cut-off Current -100 nA VCB=-20V , IE=0 IEBO Emitter-Base Cut-off Current -10 μA VEB=-5V , IC=0 HFE（1） DC Current Gain 100 600 VCE=-1V , IC=-100mA HFE（2） 40 VCE=-1V , IC=-500mA VCE(sat) Collector- Emitter Saturation V oltage -0.7 V IC=-500mA, IB=-50mA VBE(ON) Base-Emitter On V oltage -1.2 V VCE=-1V , IC=-500mA fT Current Gain-Bandwidth Product 100 MHz VCE=-5V , IC=-10mA Ccbo Collector-Base Capacitance 8 pF VCB=-10V , IE=0 F=1MHz █ h FE Classification 1 6 2 5 4 0 100 —250 160 —400 250 —600 1―Collector，C 2―Base，B 3―Emitter，E TO-92 H327 P N P S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H327 P N P S I L I C O N T R A N S I S T O R