H3192 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. H3192 N P N S I L I C O N T R A N S I S T O R █ NPN transistor for high frequency amplifier applications and HF, VHF band amplifier applications 1―Emitter，E 2―Collector，C 3―Base，B TO-92 █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 0.1 nA VCB=35V, IE=0 IEBO Emitter-Base Cutoff Current 1.0 μA VEB=4V, IC=0 HFE DC Current Gain 40 240 VCE=12V, IC=2mA VCE(sat) Collector- Emitter Saturation Voltage 0.4 V IC=10mA, IB=1mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=10mA, IB=1mA GTP Power- Gain 27 29 33 dB VCE=6V, IC=1mA fT Current Gain-Bandwidth Product 100 400 MHz VCE=10V, IC=1mA Cob Output Capacitance 1.4 2.0 3.2 pF VCB=10V, IE=0，f=1MHz █ h FE Classification R O Y 4 0—80 70 —140 120 —240