H2N7000 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 N-Channel Enhancement Mode Field Effect Transistor █ General Description 1- S 2-G 3-D TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. █ Features z High density cell design for low Rds(on). z Voltage controlled small signal switch. z Rugged and reliable. z High saturation current capability. █ Maximum Ratings（Ta=25℃ unless otherwise specified） █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions BVDSS Drain-Source Breakdown Voltage 60 V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current 1 µA VDS =48V, VGS=0V IGSS Gate – Body Leakage, Forward ±10 nA VGS= ±15V , VDS =0V VGS(TH) Gate Threshold Voltage 0.8 3.0 V VDS = VGS , ID=1mA 5 Ω VGS=10V, ID=500mA RDS(ON) Static Drain-Source On-Resistance 5.3 Ω VGS=4.5V, ID=75mA 2.5 V VGS=10V, ID=500mA VDS(ON) Drain-Source On-Voltage 0.4 V VGS=4.5V, ID=75mA ID (ON) On-State Drain Current 75 mA VGS=4.5V, VDS =10V gFS Forward Transconductance 320 mS VDS=10V, ID=200mA Ciss Input Capacitance 20 50 pF Coss Output Capacitance 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz ton Turn - On Time 10 nS toff Turn - Off Time 10 nS VDD = 15 V, RL = 25 Ω,ID = 500 m A,VGS = 10 V, RGEN = 25 Ω
Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 █ Performance Curves
Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 █ Performance Curves
Shantou Huashan Electronic Devices Co.,Ltd. H2N7000 █ Performance Curves