H2655S HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS power amplifier Applications, power Switching Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 50 V IC=100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 50 V IC=10mA, I B=0 BVEBO Emitter-Base Breakdown V oltage 5 V IE=100μA，IC=0 ICBO Collector Cut-off Current 1.0 μA VCB=50V , IE=0 IEBO Emitter Cut-off Current 1.0 μA VEB=5V , IC=0 HFE(1) DC Current Gain 70 240 VCE=2V , IC=0.5A HFE(2) 40 VCE=2V , IC=1.5A VCE(sat) Collector- Emitter Saturation V oltage 0.5 V IC=1A, IB=50mA VBE(sat) Base-Emitter Saturation V oltage 1.2 V IC=1A, IB=50mA fT Current Gain-Bandwidth Product 100 MHz VCE=2V , IC=0.5A Cob Output Capacitance 30 pF VCB=10V , IE=0，f=1MHz tON Turn-on Time 0.1 μS tSTG Storage Time 1.0 μS tF Fall Time 0.1 μS See specified test circuit █ h FE Classification O Y 70—140 120—240 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H2655S NP N S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H2655S NP N S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H2655S NP N S I L I C O N T R A N S I S T O R