H238 HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Switching and Aamplifier Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO Collector-Emitter Breakdown Voltage 25 V IC=2mA，IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=1μA，IC=0 ICES Collector Cut-off Current 0.2 15 nA VCE=30V，VBE=0 HFE DC Current Gain 120 800 VCE=5V, IC=2mA VCE(sat1) Collector- Emitter Saturation Voltage 0.07 0.2 V IC=10mA, IB=0.5mA VCE(sat2) Collector- Emitter Saturation Voltage 0.2 0.6 V IC=100mA, IB=5mA VBE(sat1) Base-Emitter Saturation Voltage 0.73 0.83 V IC=10mA， IB=0.5mA VBE(sat2) Base-Emitter Saturation Voltage 0.87 1.05 V IC=100mA， IB=5mA VBE(on) Base-Emitter On Voltage 0.55 0.62 0.7 V VCE=5V， IC=2mA fT(1) Current Gain-Bandwidth Product 85 MHz VCE=3V,IC=0.5mA，f=100MHz fT(2) Current Gain-Bandwidth Product 150 250 MHz VCE=5V,IC=10mA，f=100MHz Cob Output Capacitance 3.5 6 pF VCB=10V,IE=0，f=1MHz NF Noise Figure 2 10 dB VCE=5V,IC=0.2mA, f=1KHz，RG=2KO █ h FE Classification A B C 120—220 180—460 380—800 1―Collector，C 2―Base，B 3―Emitter，E TO-92 H238 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H238 NPN S I L I C O N T R A N S I S T O R