H2369 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS This device is designed for high speed saturated switching at collector currents of mA to 100mA █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 40 V IC=10μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage 15 V IC=10mA, I B=0 BVEBO Emitter-Base Breakdown Voltage 4.5 V IE=10μA，IC=0 HFE(1) DC Current Gain 40 150 VCE=1V, IC=10mA HFE(2) DC Current Gain 30 VCE=2, IC=100mA VCE(sat) Collector- Emitter Saturation Voltage 0.2 V IC=10mA, IB=1mA VBE(sat) Base-Emitter Saturation Voltage 0.7 V IC=10mA, IB=1mA ICBO Collector Cut-off Current 100 nA VCB=25V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=4.5V, IC=0 Cob Output Capacitance 4 pF VCB=5V, IE=0，f=1MHz 1―Collector，C 2―Base，B 3―Emitter，E TO-92 H2369 NPN S I L I C O N T R A N S I S T O R