H2222A HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS General Purpose Transistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 75 V IC=10μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage 40 V IC=10mA, I B=0 BVEBO Emitter-Base Breakdown Voltage 6 V IE=10μA，IC=0 HFE DC Current Gain 100 400 VCE=10V, IC=150mA VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=150mA, IB=15mA ICBO Collector Cut-off Current 10 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 10 nA VEB=3V, IC=0 fT Current Gain-Bandwidth Product 300 MHz VCE=20V, IC=20mA Cob Output Capacitance 8 pF VCB=10V, IE=0，f=1MHz 1―Emitter，E 2―Base，B 3―Collector，C TO-92 H2222A NPN S I L I C O N T R A N S I S T O R