H2216 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ A P P L I C A T I O N S TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 50 V I C=100μA，IE=0 BVCEO Collector-Emitter Breakdown V oltage 45 V I C=10mA，IB=0 BVEBO Emitter- Base Breakdown V oltage 4 V I E=100μA，IC=0 ICBO Collector Cut-off Current 0.1 μAV CB=30V , IE=0 IEBO Emitter Cut-off Current 0.1 μAV EB=3V , IC=0 HFE DC Current Gain 40 140 V CE=12.5V , IC=12.5mA VCE(sat） Collector- Emitter Saturation V oltage 0.2 V I C=15mA, IB=1.5mA VBE(sat) Base- Emitter Saturation V oltage 1.5 V I C=15mA,IB=1.5mA Cob Output Capacacitance 0.8 2.0 pF V CB=10V ,IE=0，f=30MHz fT Current Gain-Bandwidth Product 300 MHz V CE=12.5V , IC=12.5mA Gpe Power Gain（Fig） 29 36 dB Vcc=12.5V , IE=-12.5mA, f=45MHz 1―Base，B 2―Emitter，E 3―Collector，C TO-92 H2216 N P N S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H2216
Shantou Huashan Electronic Devices Co.,Ltd. H2216