H1684 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 120 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown V oltage 100 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown V oltage 6 V IE=10μA，IC=0 ICBO Collector Cut-off Current 100 nA VCB=100V , IE=0 IEBO Emitter Cut-off Current 100 nA VEB=4V , IC=0 HFE（1） DC Current Gain 100 400 VCE=5V , IC=100mA HFE（2） DC Current Gain 30 VCE=5V , IC=1A VCE(sat) Collector- Emitter Saturation V oltage 0.1 0.3 V IC=500mA, IB=50mA VBE(sat) Base-Emitter Saturation V oltage 0.85 1.2 V IC=500mA, IB=50mA tON Turn-On Time 80 nS tSTG Storage Time 1000 nS See specified test circuit tF Fall Time 50 nS ft Current Gain-Bandwidth Product 120 MHz VCE=10V , IC=50mA, Cob Output Capacitance 11 pF VCB=10V , IE=0,f=1MHz █ hFE Classification R S T 1 0 0 —200 140 —280 200 —400 NPN S I L I C O N T R A N S I S T O R H1684 TO-126ML 1―Emitter，E 2―Collector，C 3―Base，B