GTS6923 GTM

Document overview

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Technical content

Features

*Low on-resistance *Fast Switch Characteristic *Included Schottky Diode Package Dimensions A - 1.20 E 6.20 6.60 A1 0.05 0.15 E1 4.30 4.50 b 0.19 0.30 e 0.65 BSC c 0.09 0.20 L 0.45 0.75 D 2.90 3.10 S 0° 8° Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage (MOSFET and Schottky) VDS -20 V Reverse Voltage (Schottky) VKA 20 V Gate-Source Voltage (MOSFET) VGS ±12 V Continuous Drain Current3 (MOSFET) ID @Ta=25: -3.5 A Continuous Drain Current3 (MOSFET) ID @Ta=70: -2.8 A Pulsed Drain Current1 (MOSFET) IDM -30 A Average Forward Current (Schottky) IF 1 A Pulsed Forward Current1 (Schottky) IFM 25 A Total Power Dissipation (MOSFET) 1 W Total Power Dissipation (Schottky) PD @Ta=25: 1 W Storage Temperature Range Tstg -55 ~ +150 : Operating Junction Temperature Range Tj -55 ~ +125 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient (MOSFET) Max. Thermal Resistance Junction-ambient (Schottky) Max. Rthj-a 125 /:W BVDSS -20V RDS(ON) 50m ID -3.5A Pb Free Plating Product

GTS6923 Page: 2/4 ISSUED DATE :2006/05/04 REVISED DATE : Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.03 - V/: Reference to 25 , I:D=-1mA Gate Threshold Voltage VGS(th) -0.5 - - V VDS=VGS, ID=-250uA Forward Transconductance gfs - 10 - S VDS=-10V, ID=-3.5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25 ) : - - -1 uA VDS=-20V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - -25 uA VDS=-16V, VGS=0 - - 50 VGS=-4.5V, ID=-3.5A Static Drain-Source On-Resistance2 RDS(ON) - - 85 m VGS=-2.5V, ID=-2.7A Total Gate Charge2 Qg - 15.6 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 5.2 - nC ID=-3.5A VDS=-10V VGS=-4.5V Turn-on Delay Time2 Td(on) - 8.2 - Rise Time Tr - 9.4 - Turn-off Delay Time Td(off) - 66.4 - Fall Time Tf - 48 - ns VDS=-10V ID=-1A VGS=-4.5V RG=3.3 RD=10 Input Capacitance Ciss - 660 - Output Capacitance Coss - 285 - Reverse Transfer Capacitance Crss - 130 - pF VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-0.83A, VGS=0V Continuous Source Current(Body Diode) IS - - -0.83 A VD= VG=0V, VS=-1.2V Schottky Characteristics @ Tj=25 Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage Drop VF - - 0.5 V IF=1A Max. Reverse Leakage Current IRM - - 100 uA VR=20V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board; 208 /W when mounted on Min. copper pad.:

GTS6923 Page: 3/4 ISSUED DATE :2006/05/04 REVISED DATE : MOSFET Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature

GTS6923 Page: 4/4 ISSUED DATE :2006/05/04 REVISED DATE : SCHOTTKY DIODE Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 1. Reverse Leakage Current v.s. Junction Temperature Fig 2. Forward Voltage Drop