GT60M323_06 TOSHIBA

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Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application

  • Enhancement mode type
  • High speed : t f = 0.09 μs (typ.) (IC = 60 A)
  • Low saturation voltage : V CE (sat) = 2.3 V (typ.) (IC = 60 A)
  • FRD included between emitter and collector
  • TO-3P(LH) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 900 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C 31 Continuous collector current @ Tc = 25°C IC A Pulsed collector current ICP 120 A DC I F 15 Diode forward current Pulsed I FP 120 A @ Tc = 100°C 80 Collector power dissipation @ Tc = 25°C PC 200 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.625 °C/W Thermal resistance (diode) Rth (j-c) 4.0 °C/W Equivalent Circuit Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Gate Emitter Collector GT60M323 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES V CE = 900 V, VGE = 0 ― ― 0.1 mA Gate-emitter cut-off voltage VGE (OFF) I C = 60 mA, VCE = 5 V 4.0 ― 7.0 V Collector-emitter saturation voltage V CE (sat) I C = 60 A, VGE = 15 V ― 2.3 2.8 V Input capacitance Cies V CE = 10 V, VGE = 0, f = 1 MHz ― 4200 ― pF Rise time tr ― 0.25 ― Turn-on time ton ― 0.37 ― Fall time tf ― 0.09 0.20 Switching time Turn-off time t off Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 51 Ω (Note 1) ― 0.40 ― μs Diode forward voltage VF I F = 15 A, VGE = 0 ― 1.1 1.9 V Reverse recovery time trr I F = 60 A, di/dt = −20 A/μs ― 1.4 3.0 µs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL

Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc 0 1 2 3 4 5 100 120 VGE = 20 V Common emitter Tc = -40°C VGE = 20 V 8 0123 4 5 100 120 Common emitter Tc = 25°C VGE = 20 V 10 0 1 2 3 4 5 100 120 Common emitter Tc = 125°C Tc = 125°C −40 0 2 4 6 8 10 Common emitter VCE = 5V IC = 10 A −60 −20 20 60 100 140 Common emitter VGE = 15 V

Collector current I C (A) Gate-emitter voltage V GE (V) Gate charge Q G ( n C ) VCE, VGE – QG Collector-emitter voltage V CE (V) Gate resistance R G ( Ω) Switching Time – RG Switching time (µs) Collector current I C (A) Switching Time – IC Switching time (µs) Capacitance C (pF) Collector-emitter voltage V CE (V) C – V CE Collector- emitter voltage V CE (V) Safe Operating Area Collector-emitter voltage V CE (V) Reverse Bias SOA Collector current I C (A) VCE = 150 V 0 60 120 180 240 100 150 200 100 50 Common emitter RL = 2.5 Ω Tc = 25°C Cres 1 10 100 1000 10000 100 1000 10000 Coes Cies Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.01 1 10 100 1000 0.1 ton toff tr tf Common emitter VCC = 600 V IC = 60 A VGG = ±15 V Tc = 25°C 0.01 01 0 5 0 7 0 0.1 toff ton tf tr 20 30 40 60 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 1 10 100 1000 10000 100 1000 10 µs* 1 ms* 100 µs* 10 ms IC max (pulsed)* IC max (continuous) DC operation * Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 10 100 1000 10000 100 1000 Tj < = 125°C VGG = 20 V RG = 10 Ω

Case temperature Tc (°C) ICmax – Tc Maximum DC collector current I Cmax (A) Pulse width t w ( s ) Forward voltage V F ( V ) IF – VF Forward current I F (A) Peak reverse recovery current I rr (A) Forward current I F (A) trr, Irr – IF Rth (t) – tw Transient thermal impedance R th (t) ( ° C / W ) Reverse recovery time t rr (µs) Peak reverse recovery current I rr (A) di/dt (A/µs) trr, Irr – di/dt Reverse recovery time t rr (µs) 25 50 100 125 150 Common emitter VGE = 15 V 10−2 10−5 10−4 10−1 10 0 10 2 100 101 102 Tc = 25°C 10−1 10−210−3 101 Diode stage IGBT stage 0 0.4 1.6 2.0 2.4 100 1.20.8 −40 Tc = 125°C Common collector 0.8 02 0 8 0 1.2 1.4 1.6 1.0 60 40 trr Irr Common Collector di/dt = −20 A/µs Tc = 25°C 0.0 0 40 180 0.8 1.2 1.6 0.4 160 80 trr Irr 120 Common collector IF = 60 A Tc = 25°C

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
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