GT60M322 TOSHIBA

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Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application

  • Enhancement mode type
  • High speed : t f = 0.15 µs (typ.) (IC = 60 A)
  • Low saturation voltage : V CE (sat) = 2.3 V (typ.) (IC = 60 A)
  • FRD included between emitter and collector
  • TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 950 V Gate-emitter voltage V GES ±25 V DC I C 60 Collector current 1ms I CP 120 A DC I F 25 Diode forward current Pulsed I FP 50 A @ Tc = 100°C 76 Collector power dissipation @ Tc = 25°C PC 190 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c) 0.66 °C/W Thermal resistance (diode) R th (j-c) 1.38 °C/W Equivalent Circuit Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Gate Emitter Collector GT60M322 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current I CES V CE = 950 V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 60 mA, VCE = 5 V 6.0 ― 9.0 V Collector-emitter saturation voltage V CE (sat) I C = 60 A, VGE = 15 V ― 2.3 2.7 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ― 6800 ― pF Rise time tr ― 0.42 ― Turn-on time t on ― 0.62 ― Fall time t f ― 0.15 0.21 Switching time Turn-off time t off Resistive Load VCC = 600 V, IC = 60 A VGG = ±15 V, RG = 30 Ω (Note 1) ― 0.39 ― µs Diode forward voltage V F I F = 25 A, VGE = 0 ― ― 3.0 V Reverse recovery time t rr I F = 25 A, di/dt = −200 A/µs ― ― 0.35 µs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL

Collector current I C (A) Collector-emitter voltage V CE ( V ) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE ( V ) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE ( V ) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 0 5 15 20 25 0 4 81 2 1 6 100 IC = 10 A Common emitter Tc = -40°C 0 5 10 15 20 25

30 IC = 10 A

Tc = 25°C IC = 10 A Common emitter Tc = 125°C 0 5 10 15 20 25 TC = 125°C −40 Common emitter VCE = 5 V 0 1 2 3 4 5 120 Common emitter Tc = 25°C VGE = 9 V 100 −40 0 40 80 160 120 IC = 10 A Common emitter VGE = 15 V

Collector current I C (A) Gate-emitter voltage V GE (V) Gate charge Q G ( n C ) VCE, VGE – QG Collector-emitter voltage V CE ( V ) Gate resistance R G ( Ω) Switching Time – RG Switching time ( µs) Collector current I C (A) Switching Time – IC Switching time ( µs) Capacitance C (pF) Collector-emitter voltage V CE (V) C – V CE Collector- emitter voltage V CE (V) Safe Operating Area Collector-emitter voltage V CE (V) Reverse Bias SOA Collector current I C (A) 0 100 150 400 500 120 200 1 10 100 1000 10000 100 1000 0.1 1 10 100 1000 3000 100 1000 VCE = 150 V 100 V 50 V Common emitter RL = 2.5 Ω Tc = 25°C 160 50 200 250 300 350 450 Coes Cres Cies Common emitter VGE = 0 f = 1 MHz Tc = 25°C 10000 100000 0.1 1 10 100 1000 Common emitter VCC = 600 V IC = 60 A VGG = ±15 V Tc = 25°C ton tf tr toff 10 µs* 1 ms* 100 µs* 10 ms IC max (pulsed)* IC max (continuous) DC operation * Single non-repetitive pulse T c = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 10 100 1000 3000 100 1000 Tj <= 125°C VGG = 20 V RG = 10 Ω 0.01 01 0 5 0 7 0 0.1 20 30 40 60 toff ton tr tf Common emitter VCC = 600 V RG = 30 Ω VGG = ±15 V Tc = 25°C

Pulse width t w (s) Rth (t) – tw Transient thermal impedance R th (t) (°C/W) Forward voltage V F (V) Peak reverse recovery current I rr (A) Forward current I F ( A ) trr, Irr – IF Reverse recovery time t rr ( µs) IF – VF 0.01 0 5 30 0.1 20 15 100 10−4 10 −1 10 0 10 2 100 101 102 10−1 10−2 10−3 10 1 Tc = 25°C Diode stage IGBT stage 0 1 4 5 3 2 Tc = 125°C −40 Common collector 10 25 Irr trr Common Collector di/dt = −200 A/µs : T c = 25°C : T c = 125°C

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