GT60M104 TOSHIBA

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm e@ High Input Impedance 20.5MAX. 1 93.3402 @ High Speed 2 tp=0.4us (Max.) Lode 12 , + 3 ¢ Low Saturation Voltage : VCR (sat)=3.7V (Max.) , dt 3 © Enhancement-Mode Ei git_lisl 5 4 © Recommended FRD $5J12 2s Vi | 3.0 # MAXIMUM RATINGS (Ta = 25°C) +03 { i 8 107835 i | CHARACTERISTIC SYMBOL | RATING | UNIT |] 245225 p45 20.15 rid Fi Collector-Emitter Voltage VCES [ 900 | v | SF uolz Gate-Emitter Voltage VGES ° ri a eS Collector Current £ A 1. GATE | ims | tcp | 120 | 2 COLLECTOR (HEAT SINK) Collector Power Dissipation 3. EMITTER = 95° Pc w (Tce=25°C) JEDEC = TOSHIBA _2-21F2C [serew Torque TT] im | Weight: 9.755 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION xan. | rye. [max.|unrr] Gate Leakage Current Ions _|VGE=+25V, VoR=0 | — | — | +500 Collector Cut-off Current lors _|Vcp=900V, Van=0 [| — | — | 10] ma | Gate-Emitter Cut-off Voltage Van (OFF) [Io=60mA, Von=5V [30] — | eo] v | Collector-Emitter Ig=10A, Vop=15V |= |= | 24), Von=10V, Ven=0,f=imHz | — |5300| — | oF | Sc " = S —15V Thermal Resistance [ Rmgo | = = J 0.625 610916442 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION fof any Infringements of intellectual property-Or other rignts GF tne thita parties Which may result rom Ite use. ‘NO Teense’'s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/4

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