GT60J322 TOSHIBA

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Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications

  • Enhancement-mode
  • Low saturation voltage: V CE (sat) = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES ±25 V DC I C 60 Collector current 1 ms I CP 120 A DC I ECF 60 Emitter-collector forward current 1 ms I ECPF 120 A Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature T j 150 °C Storage temperature range T stg −55~150 °C Screw torque  0.8 N ŋm Equivalent Circuit Unit: mmç JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Gate Emitter Collector

Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±25 V, VCE = 0   ±500 nA Collector cut-off current I CES V CE = 600 V, VGE = 0   1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 60 mA, VCE = 5 V 3.0  6.0 V VCE (sat) (1) I C = 10 A, VGE = 15 V  0.95 1.45 Collector-emitter saturation voltage VCE (sat) (2) I C = 60 A, VGE = 15 V  1.25 1.65 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz  13500  pF Rise time t r  0.25  Turn-on time t on  0.35  Fall time t f  1.00 1.50 Switching time Turn-off time t off  1.50  µs Forward voltage V F I F = 60 A, VGE = 0  1.2 1.6 V Reverse recovery time t rr I F = 60 A, VGE = 0, di/dt = −100 A/µs  0.6 1.0 µs Thermal resistance (IGBT) R th (j-c)    0.625 °C/W Thermal resistance (Diode) R th (j-c)    0.96 °C/W −15 V 15 V

300 V 5 Ω 18 Ω

Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 0 4 8 12 16 Common emitter Tc = −40°C IC = 10 A 120 0 4 8 12 16 Common emitter Tc = 25°C IC = 10 A 120 0 4 8 12 16 Common emitter Tc = 125°C IC = 10 A 120 0 4 8 12 16 100 Common emitter VCE = 5 V Tc = 125°C −40 0 0.4 0.8 1.2 1.6 100 Common emitter Tc = 25°C 2.0 VGE = 8 V −40 0 40 80 120 160 Common emitter VGE = 15 V 120 IC = 10 A

Switching time ( µs) Collector current I C (A) Gate resistance R G ( Ω ) Switching time – RG Switching time ( µs) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Switching time – IC 0 100 200 300 400 Common emitter RL = 5 Ω Tc = 25°C 500 1 3 10 300 500 30 100 300 1000 3000 100 3000 5000 1000 30000 50000 10000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C Cies Coes Cres Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE ( ×25 V) Gate-emitter voltage V GE (V) 3 5 10 0.1 0.3 0.5 Common emitter VCC = 300 V VGG = ±15 V IC = 60 A Tc = 25°C toff tf tr ton 30 50 100 300 0.05 0.5 0 40 60 80 0.1 0.3 Common emitter VCC = 300 V R G = 18 Ω VGG = ±15 V Tc = 25°C toff tr tf ton 0.1 0.3 1 10 30 100 300 1000 0.5 100 300 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. DC operation IC max (pulsed) IC max (continuous) 10 ms* 1 ms* 100 µs* 10 µs*

Junction capacitance C j ( p F ) Peak reverse recovery current I rr (A) Forward voltage V F (V) IF − VF Forward current I F (A) Reverse recovery time t rr (ns) Forward current I F (A) Irr trr, − IF Reverse voltage V R (V) Cj − VR 100 Tc = 125°C −40 25 Common collector VGE = 0 Reverse recovery time t rr (ns) di/dt (A/ µs) Irr, trr – di/dt Peak reverse recovery current I rr (A) 100 0 40 80 120 160 240 200 Common collector IF = 60 A Tc = 25°C Irr trr 1000 500 Tj <= 125°C VGE = ±15 V RG = 18 Ω 1 10 3 100 30 1000 3000 100 300 Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C (A) 10−3 10−4 10 −3 10 −2 10 −1 10 0 10 1 10 2 10−2 10−1 101 100 102 Tc = 25°C Diode IGBT Pulse width t w (s) rth (t) – tw Transient thermal impedance r th (t) (°C/W) 0 10 20 30 40 60 100 1000 Irr trr Common collector di/dt = −100 A/µs VGE = 0 Tc = 25°C 500 300 0 3 10 100 1000 300 500 5 30 100 50 300 500 3000 f = 1 MHz Tc = 25°C

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